Title :
Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating
Author :
Shindo, Takatoshi ; Futami, Mitsuaki ; Okumura, Takashi ; Osabe, Ryo ; Koguchi, T. ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Toward the light source for on-chip interconnection, a current-injection-type membrane distributed feedback laser with a surface gating structure is demonstrated. In this device, 450-nm-thick GaInAsP/InP layers with lateral-current-injection structure prepared by a two step OMVPE regrowth-method is bonded on a host substrate by using Benzocyclobutene bonding process. A threshold current of Ith=11 mA is obtained with a cavity length of 300 μm and a stripe of 1 μm.
Keywords :
Bragg gratings; III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; indium compounds; integrated optoelectronics; laser cavity resonators; light sources; membranes; optical interconnections; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; DFB laser; GaInAsP-InP; benzocyclobutene bonding process; cavity length; current 11 mA; distributed feedback laser; lateral-current-injection type membrane; light source; on-chip interconnection; size 1 mum; size 300 mum; size 450 nm; surface grating structure; threshold current; two-step OMVPE regrowth-method; Semiconductor laser; lateral-current-injection; membrane laser; surface grating structure;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2261980
