DocumentCode :
84689
Title :
Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester
Author :
Cho, Byungjin ; Song, Sunghoon ; Ji, Yongsung ; Choi, Ho-Gil ; Ko, Heung Cho ; Lee, Jae-Suk ; Jung, Gun-Young ; Lee, Takhee
Author_Institution :
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
34
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
51
Lastpage :
53
Abstract :
We demonstrated nonvolatile 8 × 8 array organic memory devices utilizing a PC-interface memory cell tester. The organic memory devices composed of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/p+ poly-Si structure exhibited excellent memory performance properties, including stable switching behavior, proper statistical distribution, and long retention time. We succeeded in independently addressing and reading the data in the memory cell array using the PC-interface memory cell tester, opening an avenue toward more realistic organic memory device applications.
Keywords :
elemental semiconductors; integrated circuit testing; organic compounds; random-access storage; silicon; silver; statistical distributions; Ag-Si; PC-interface memory cell tester; addressable organic resistive memory; memory cell array; nonvolatile 8×8 array organic memory devices; p+-poly-silicon structure; silver-poly(3-hexylthiophene-2,5-diyl); stable switching behavior; statistical distribution; Arrays; Electrodes; Nonvolatile memory; Polymers; Resistance; Switches; Threshold voltage; Nonvolatile memory; PC interface; organic memory; resistive switching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2226231
Filename :
6374641
Link To Document :
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