• DocumentCode
    846931
  • Title

    Non-volatile Al2O3 memory using an Al-rich structure as a charge-storing layer

  • Author

    Nakata, S. ; Saito, K. ; Shimada, M.

  • Author_Institution
    NTT Microsyst. Integration Labs., Kanagawa, Japan
  • Volume
    41
  • Issue
    12
  • fYear
    2005
  • fDate
    6/9/2005 12:00:00 AM
  • Firstpage
    721
  • Lastpage
    722
  • Abstract
    The memory characteristics of a new non-volatile Al2O3 memory deposited by electron-cyclotron-resonance sputtering are described. Al-rich Al2O3 was fabricated at a reduced oxygen gas flow rate. Capacitance-voltage characteristics show a large hysteresis window owing to the Al-rich structure. This memory will stay non-volatile for several years or more.
  • Keywords
    alumina; cyclotron resonance; random-access storage; sputtered coatings; Al2O3; capacitance-voltage characteristics; charge-storing layer; electron-cyclotron-resonance sputtering; nonvolatile memory; reduced oxygen gas flow rate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051419
  • Filename
    1441133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=846931