SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor

Author

Lee, Jieun ; Lee, Jin-Moo ; Lee, Jung Han ; Uhm, Mihee ; Lee, Won Hee ; Hwang, Seonwook ; Chung, In-Young ; Park, Byung-Gook ; Kim, Dong Myong ; Jeong, Yong-Joo ; Kim, Dae Hwan

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

135

Lastpage

137

Abstract

We proposed a silicon nanowire (SiNW)-CMOS hybrid common-source amplifier (CSA) as a voltage-readout hydrogen ion sensor and fabricated it on a 6-in silicon-on-insulator wafer using a conventional back-end process and a wafer-level top-down process. The current-defined sensitivity ΔIDS/IDS of the SiNW itself was 0.18, and the maximum output voltage shift found in the CSA configuration was 38.1 mV/pH. A simple analytical model showed that the voltage-defined sensitivity can be controlled and maximized by the gate voltage of the MOSFET, indicating that process variations of SiNWs are electrically controllable in a SiNW-based sensor array system with the voltage-readout scheme.

Keywords

CMOS integrated circuits; amplifiers; nanowires; silicon-on-insulator; CMOS hybrid common source amplifier; MOSFET; back end process; gate voltage; sensor array system; silicon nanowire; silicon on insulator wafer; voltage defined sensitivity; voltage readout hydrogen ion sensor; voltage readout scheme; wafer level top down process; Biosensors; FETs; Hydrogen; Logic gates; MOSFET circuits; Semiconductor device measurement; Sensitivity; Common-source amplifier (CSA); hydrogen ion sensor; silicon nanowire (SiNW) field-effect transistor (FET); top-down fabrication; voltage readout;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2226136

Filename

6374642