Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy

Author

Ihn, Soo-Ghang ; Song, Jong-In ; Kim, Young-Hun ; Lee, Jeong Yong ; Ahn, Il-Ho

Author_Institution

Center for Distributed Sensor Networks, Gwangju Inst. of Sci. & Technol.

Volume

6

Issue

3

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

384

Lastpage

389

Abstract

Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth method using a molecular beam epitaxy (MBE). The MBE growth could produce controlled crystalline orientation and uniform diameter along the wire axis of the GaAs nanowires by adjusting growth conditions including growth temperature and V/III flux ratio. Growths of GaAslang001rang as well as GaAslang111rang nanowires were observed by transmission electron microscopy and scanning electron microscopy. Epitaxially grown GaAslang111rang nanowires on a Si(111) substrate were verified through x-ray diffraction out-of-plane 2thetas/omega-scans. A strong room-temperature photoluminescence (PL) was observed from the epitaxially grown GaAslang111rang nanowires on a Si(100) substrate. Results of low-temperature (10 K) PL measurements and current-sensing atomic force microscopy indicated that the GaAs nanowires on a Si substrate were unintentionally doped with Si

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; catalysts; crystal orientation; gallium arsenide; gold; molecular beam epitaxial growth; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; transmission electron microscopy; 293 to 298 K; Au; Au-catalyzed nanowires; GaAs; MBE; PL; Si; X-ray diffraction; crystalline orientation; current-sensing atomic force microscopy; molecular beam epitaxy; room-temperature photoluminescence; scanning electron microscopy; semiconductor nanowire growth; semiconductor substrates; transmission electron microscopy; vapor-liquid-solid growth method; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; Molecular beam epitaxial growth; Nanowires; Scanning electron microscopy; Substrates; Temperature control; Transmission electron microscopy; Atomic force microscopy; GaAs nanowire on Si; molecular beam epitaxy; photoluminescence;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2007.894362

Filename

4200729