High-Mobility Solution-Processed Amorphous Indium Zinc $\hbox {O\xide/In}_{2}\hbox {O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In₂O₃ NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm²·V^-1·s^-1 and an on-off ratio of 10⁷ , which were obtained at 1 mol% In₂O₃ NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.