Millimeter-wave AlGaAs-GaAs HBT power operation

Author

Wang, Nan-Lei ; Ho, Wu-Jing ; Higgins, J.A.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

2

Issue

10

fYear

1992

Firstpage

397

Lastpage

399

Abstract

The AlGaAs-GaAs HBT has demonstrated good power performance up to 18 GHz. Although f/sub max/ is typically above 100 GHz, the power performance limitation and large signal operation at millimeter wave frequencies have not been studied. Power results from two HBT structures at 35 GHz are analyzed based on numerical simulation. The HBT demonstrated 8.5-dB linear power gain, 30% PAE with 7.8-dB gain and 7.5-V V/sub ce/ bias. The power density reaches 1.25 mW/ mu m/sup 2/. A shorter collector (0.4 mu m) is shown to be better suited for 35-GHz operation as a result of shorter collector transit time and smaller residual collector voltage. Improvement can be achieved by reducing the base and collector resistance, and the collector capacitance.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 35 GHz; AlGaAs-GaAs; HBT power operation; MM-wave type; large signal operation; millimeter wave frequencies; numerical simulation; Capacitance; Fabrication; Fingers; Frequency; Gain; Heterojunction bipolar transistors; Numerical simulation; Ohmic contacts; Testing; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.160119

Filename

160119