Title :
Noise Characteristics of ZnO-Nanowire Photodetectors Prepared on ZnO:Ga/Glass Templates
Author :
Lu, Chien-Yuan ; Chang, Sheng-Po ; Chang, Shoou-Jinn ; Chiou, Yu-Zung ; Kuo, Che-Fu ; Chang, Hong-Ming ; Hsu, Cheng-Liang ; Chen, I-Cherng
Author_Institution :
Nat. Cheng Kung Univ., Tainan
fDate :
7/1/2007 12:00:00 AM
Abstract :
In this paper, we report the fabrication of vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors on ZnO:Ga/glass templates. With 1 V applied bias, it was found that dark current density of the device was only 1.37times10-7 A/cm2. It was also found that UV-to-visible rejection ratio of the fabricated photodetector was around 1000 with a maximum quantum efficiency of 12.6%. It was also found that noise equivalent power and normalized detectivity of the ZnO nanowire photodetector were 5.73times10-11 W and 6.17times109 cmHz0.5W-1, respectively.
Keywords :
gallium; nanowires; photodetectors; semiconductor device noise; semiconductor quantum wires; ultraviolet detectors; zinc compounds; UV-to-visible rejection ratio; ZnO - Interface; dark current density; nanowire ultraviolet photodetectors; noise equivalent power; normalized detectivity; quantum efficiency; Chemical vapor deposition; Glass; Nanoscale devices; Optical films; Optoelectronic devices; Photodetectors; Semiconductor device noise; Substrates; Temperature; Zinc oxide; Detectivity; ZnO; nanowires; noise equivalent power (NEP); quantum efficiency; vapor-liquid-solid (VLS);
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2007.896567
