UV Enhanced Emission Performance of Low Temperature Grown Ga-Doped ZnO Nanorods

Author

Shoou-Jinn Chang ; Bi-Gui Duan ; Chih-Hung Hsiao ; Chung-Wei Liu ; Sheng-Joue Young

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

26

Issue

1

fYear

2014

fDate

Jan.1, 2014

Firstpage

66

Lastpage

69

Abstract

We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90°C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/μm while field-enhancement factors β were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90°C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/μm and β of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.

Keywords

II-VI semiconductors; field emission; gallium; nanofabrication; nanorods; semiconductor doping; semiconductor growth; wide band gap semiconductors; zinc compounds; UV enhanced emission performance; UV illumination; ZnO; ZnO:Ga; field emitters; field-enhancement factors; gallium doping; hydrothermal growth; low temperature grown GZO nanorods; pure wurtzite structure; temperature 90 degC; turn-on electrical field; Current density; Gallium; Lighting; Photonic band gap; Zinc oxide; GZO nanorod; field emitters; hydrothermal;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2289322

Filename

6657695