Title :
UV Enhanced Emission Performance of Low Temperature Grown Ga-Doped ZnO Nanorods
Author :
Shoou-Jinn Chang ; Bi-Gui Duan ; Chih-Hung Hsiao ; Chung-Wei Liu ; Sheng-Joue Young
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
We report on hydrothermal growth and gallium doping of ZnO (GZO) nanorods for field emitters. The GZO nanorods grown at 90°C were structurally uniform and well oriented with pure wurtzite structure. It was also found that turn-on fields were 5.4 and 3.6 V/μm while field-enhancement factors β were 1711 and 9058, for the ZnO nanorods and GZO nanorods grown at 90°C, respectively. In addition, the turn-on electrical field was reduced from 3.6 to 3.15 V/μm and β of GZO nanorods was enhanced from 9058 to 13529 by UV illumination.
Keywords :
II-VI semiconductors; field emission; gallium; nanofabrication; nanorods; semiconductor doping; semiconductor growth; wide band gap semiconductors; zinc compounds; UV enhanced emission performance; UV illumination; ZnO; ZnO:Ga; field emitters; field-enhancement factors; gallium doping; hydrothermal growth; low temperature grown GZO nanorods; pure wurtzite structure; temperature 90 degC; turn-on electrical field; Current density; Gallium; Lighting; Photonic band gap; Zinc oxide; GZO nanorod; field emitters; hydrothermal;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2289322
