Title :
DC characteristics and stability behaviour of high-speed Si/SiGe HBTs with undoped SiGe spacer between base and collector
Author :
Schreiber, H.-U. ; Albers, J.N.
Author_Institution :
Ruhr Univ. Bochum, Germany
fDate :
6/18/1992 12:00:00 AM
Abstract :
The quality of MBE-grown Si/SiGe heterojunction bipolar transistors (HBTs) was improved by inserting a well-defined undoped SiGe layer between the neutral base and the collector. The DC characteristics and the long-term stability of these non-selfaligned devices proved to be excellent, and the transit frequency reached 33 GHz (VCB=1 V). Those features are essential preconditions for future application in high-speed ICs.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor device testing; semiconductor materials; silicon; stability; 33 GHz; DC characteristics; MBE; Si-SiGe; heterojunction bipolar transistors; high speed HBT; nonselfaligned devices; stability; transit frequency; undoped SiGe spacer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920750
