Title :
Development of epitaxial nitride-based bilayers for magnetic tunnel junctions
Author :
Borsa, D.M. ; Grachev, S. ; Boerma, D.O.
Author_Institution :
Nucl. Solid State Phys., Mater. Sci. Center, Groningen Univ., Netherlands
fDate :
9/1/2002 12:00:00 AM
Abstract :
This paper reports on the growth and properties of bilayer structures consisting of insulating epitaxial Cu3N films grown on epitaxial ferromagnetic γ´´-Fe4N films. The interface between the layers is successfully probed with Mossbauer spectroscopy. In our fully epitaxial system, no intermixing occurs at the interface. Depending on the growth parameters (gas mixture, deposition temperature), the interface is also free of undesired nitride phases.
Keywords :
MIM structures; Rutherford backscattering; X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; ellipsometry; giant magnetoresistance; magnetic epitaxial layers; magnetic hysteresis; magnetic multilayers; molecular beam epitaxial growth; tunnelling; Cu3N-Fe4N; MBE; Mossbauer spectra; Rutherford backscattering; XPS; XRD; atomic force microscopy; ellipsometry; epitaxial ferromagnetic films; epitaxial nitride-based bilayers; growth parameters; hysteresis loop; insulating epitaxial films; magnetic tunnel junction; optimal substrate temperature; tunneling magnetoresistance; Atomic layer deposition; Copper; Insulation; Iron; Magnetic films; Magnetic tunneling; Molecular beam epitaxial growth; Nitrogen; Substrates; Tunneling magnetoresistance;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2002.803156
