Development of epitaxial nitride-based bilayers for magnetic tunnel junctions

Author

Borsa, D.M. ; Grachev, S. ; Boerma, D.O.

Author_Institution

Nucl. Solid State Phys., Mater. Sci. Center, Groningen Univ., Netherlands

Volume

38

Issue

5

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

2709

Lastpage

2711

Abstract

This paper reports on the growth and properties of bilayer structures consisting of insulating epitaxial Cu₃N films grown on epitaxial ferromagnetic γ´´-Fe₄N films. The interface between the layers is successfully probed with Mossbauer spectroscopy. In our fully epitaxial system, no intermixing occurs at the interface. Depending on the growth parameters (gas mixture, deposition temperature), the interface is also free of undesired nitride phases.

Keywords

MIM structures; Rutherford backscattering; X-ray diffraction; X-ray photoelectron spectra; atomic force microscopy; ellipsometry; giant magnetoresistance; magnetic epitaxial layers; magnetic hysteresis; magnetic multilayers; molecular beam epitaxial growth; tunnelling; Cu₃N-Fe₄N; MBE; Mossbauer spectra; Rutherford backscattering; XPS; XRD; atomic force microscopy; ellipsometry; epitaxial ferromagnetic films; epitaxial nitride-based bilayers; growth parameters; hysteresis loop; insulating epitaxial films; magnetic tunnel junction; optimal substrate temperature; tunneling magnetoresistance; Atomic layer deposition; Copper; Insulation; Iron; Magnetic films; Magnetic tunneling; Molecular beam epitaxial growth; Nitrogen; Substrates; Tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2002.803156

Filename

1042326