DocumentCode
847414
Title
Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy
Author
Lord, S.M. ; Pezeshki, B. ; Harris, J.S.
Author_Institution
Stanford Univ., CA, USA
Volume
28
Issue
13
fYear
1992
fDate
6/18/1992 12:00:00 AM
Firstpage
1193
Lastpage
1195
Abstract
Excitonic resonances and the quantum confined Stark effect are observed near 1.3 mu m in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3 mu m and as a low leakage photodetector.
Keywords
III-V semiconductors; Stark effect; electro-optical devices; gallium arsenide; indium compounds; infrared detectors; infrared spectra of inorganic solids; molecular beam epitaxial growth; optical modulation; photodetectors; semiconductor growth; semiconductor quantum wells; 1.3 micron; InGaAs-GaAs quantum wells; excitonic resonances; low leakage photodetector; modulator; molecular beam epitaxy; p-i-n structure; quantum confined Stark effect; relative transmission modulation; slowly graded InGaAs buffer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920754
Filename
144330
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