Title :
ALCVD AlOx barrier layers for magnetic tunnel junction applications
Author :
Bubber, R. ; Mao, M. ; Schneider, T. ; Hegde, H. ; Sin, K. ; Funada, S. ; Shi, S.
Author_Institution :
Fremont Application Lab, Veeco Instruments, Inc, Fremont, CA, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
Ultrathin AlOx layers 5-25 Å thick were deposited using the atomic-layer chemical vapor deposition technique. A magnetic thickness loss of ∼ 1 Å has been estimated at CoFe-AlOx or NiFe-AlONiFe-AlOx interfaces. The two-dimensional integrity of the thin AlOx films at thickness >7 Å has been validated by the differential switching of two magnetic layers sandwiching a ultrathin AlOx layer and the distinct cross-sectional transmission-electron-microscopy images. No appreciable tunnel magnetoresistance effect has been measured from the fabricated magnetic tunnel junction devices. A proper in situ treatment prior to and/or after AlOx deposition and a proper protection of the underlying magnetic layer are expected for further improvements.
Keywords :
MIM structures; aluminium compounds; atomic layer epitaxial growth; chemical vapour deposition; diffusion barriers; giant magnetoresistance; insulating thin films; magnetic multilayers; transmission electron microscopy; tunnelling; 5 to 25 A; AlO; atomic layer CVD barrier layers; cross-sectional transmission-electron-microscopy; differential switching; magnetic thickness loss; magnetic tunnel junction; tunnel barrier; tunnel magnetoresistance; two-dimensional integrity; ultrathin films; Atomic layer deposition; Chemical vapor deposition; Inductors; Magnetic films; Magnetic losses; Magnetic tunneling; Semiconductor films; Silicon compounds; Substrates; Vibration measurement;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2002.803163
