DocumentCode :
84749
Title :
Influence of the Switching Speed of the Disconnector on Very Fast Transient Overvoltage
Author :
Shu Yinbiao ; Han Bin ; Lin Ji-ming ; Chen Weijiang ; Ban Liangeng ; Xiang Zutao ; Chen Guoqiang
Author_Institution :
State Grid Corp. of China, Beijing, China
Volume :
28
Issue :
4
fYear :
2013
fDate :
Oct. 2013
Firstpage :
2080
Lastpage :
2084
Abstract :
During the switching of disconnectors in gas-insulated switchgear (GIS), repeated strikes occur in the contact gap and lead to very fast transient overvoltage (VFTO). Severe VFTO may bring damage to transformers and other equipment. The switching speed of the disconnector is one of the important factors which influences VFTO. There are still different opinions on this factor. Very little quantitative study was done before this paper. In this paper, the whole repeated strike process associated with the switching operation of the disconnector was simulated and analyzed. The polarity and the probability characteristics of breakdown voltage were analyzed. The impacts of the switching speed of the disconnector on VFTO were studied by statistical methods. Comparisons were made between simulated and measured results. The simulation result shows that within a certain range of speed, disconnectors with a lower switching speed generate lower trapped charge voltage after opening operation and lower VFTO magnitude during the opening and closing operations.
Keywords :
electric breakdown; gas insulated switchgear; overvoltage; power transformers; probability; statistical analysis; GIS; VFTO; breakdown voltage analysis; contact gap; gas-insulated switchgear; lower trapped charge voltage; probability characteristics; statistical method; switching speed disconnector; transformer; very fast transient overvoltage; Gas insulation; Switchgear; Transient analysis; Voltage control; Disconnector; gas-insulated switchgear (GIS); ultra-high voltage (UHV); very fast transient overvoltage (VFTO);
fLanguage :
English
Journal_Title :
Power Delivery, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8977
Type :
jour
DOI :
10.1109/TPWRD.2013.2273620
Filename :
6579779
Link To Document :
بازگشت