Title :
Extraction techniques for FET switch modeling
Author :
Ehoud, Amos ; Dunleavy, Lawrence P. ; Lazar, Steven C. ; Branson, Roger E.
Author_Institution :
Univ. of South Florida, Tampa, FL, USA
fDate :
8/1/1995 12:00:00 AM
Abstract :
A new simple method for extracting equivalent circuit parameters for series and shunt GaAs FET switches is presented. The circuit elements are extracted from one set of S-parameter measurements for each switch state, and scale linearly with gate width. Extracted Equivalent Circuit Parameters (ECP´s) are insensitive to frequency across the measured bandwidth. Good agreement has been obtained between simulated and model results for a 0.5 μm gate length series and shunt GaAs FET switches of varying gate widths, across the 0.45-26.5 GHz band
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; field effect transistor switches; gallium arsenide; microwave field effect transistors; semiconductor device models; 0.45 to 26.5 GHz; 0.5 micron; FET switch modeling; GaAs; S-parameter measurements; equivalent circuit parameters; extracted equivalent circuit parameters; gate widths; series FET switches; shunt FET switches; Calibration; Delay lines; Equivalent circuits; FETs; Frequency; Gallium arsenide; Scattering parameters; Shunt (electrical); Switches; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
