DocumentCode
847595
Title
Novel Schottky diode with selfaligned guard ring
Author
Cha, S.I. ; Cho, Young H. ; Choi, Y.I. ; Chung, S.K.
Author_Institution
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
Volume
28
Issue
13
fYear
1992
fDate
6/18/1992 12:00:00 AM
Firstpage
1221
Lastpage
1223
Abstract
A novel Schottky diode structure with selfaligned guard ring is proposed which allows 4-5 times improvement in breakdown voltage over that of the conventional metal overlap Schottky diode. The fabrication method using reactive ion etching (RIE) requires no additional masking step. Breakdown voltages are determined from the I-V curves of the fabricated devices. The results are in the range 200-250 V when the guard ring junction depth is larger than the etch depth.
Keywords
Schottky-barrier diodes; electric breakdown of solids; 200 to 250 V; RIE; Schottky diode; breakdown voltage improvement; fabrication method; guard ring junction depth; reactive ion etching; selfaligned guard ring;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920771
Filename
144347
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