Title :
Novel Schottky diode with selfaligned guard ring
Author :
Cha, S.I. ; Cho, Young H. ; Choi, Y.I. ; Chung, S.K.
Author_Institution :
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
6/18/1992 12:00:00 AM
Abstract :
A novel Schottky diode structure with selfaligned guard ring is proposed which allows 4-5 times improvement in breakdown voltage over that of the conventional metal overlap Schottky diode. The fabrication method using reactive ion etching (RIE) requires no additional masking step. Breakdown voltages are determined from the I-V curves of the fabricated devices. The results are in the range 200-250 V when the guard ring junction depth is larger than the etch depth.
Keywords :
Schottky-barrier diodes; electric breakdown of solids; 200 to 250 V; RIE; Schottky diode; breakdown voltage improvement; fabrication method; guard ring junction depth; reactive ion etching; selfaligned guard ring;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920771
