Title :
Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection
Author :
Wang, X.S. ; Xin Wang ; Fei Lu ; Chen Zhang ; Zongyu Dong ; Li Wang ; Rui Ma ; Zitao Shi ; Wang, A. ; Chang, M.-C.F. ; Wang, D. ; Joseph, A. ; Yue, C.P.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA
Abstract :
This paper discusses concurrent design and analysis of the first 8.5 kV electrostatic discharge (ESD) protected single-pole ten-throw (SP10T) transmit/receive (T/R) switch for quad-band (0.85/0.9/1.8/1.9 GHz) GSM and multiple-band WCDMA smartphones. Implemented in a 0.18 μm SOI CMOS, this SP10T employs a series-shunt topology for the time-division duplex (TDD) transmitting (Tx) and receiving (Rx), and frequency-division duplex (FDD) transmitting/receiving (TRx) branches to handle the high GSM transmitter power. The measured P0.1 dB, insertion loss and Tx-Rx isolation in the lower/upper bands are 36.4/34.2 dBm, 0.48/0.81 dB and 43/40 dB, respectively, comparable to commercial products with no/little ESD protection in high-cost SOS and GaAs technologies. Feed-forward capacitor (FFC) and AC-floating bias techniques are used to further improve the linearity. An ESD-switch co-design technique is developed that enables simultaneous whole-chip design optimization for both ESD protection and SP10T circuits.
Keywords :
CMOS integrated circuits; III-V semiconductors; UHF integrated circuits; electrostatic discharge; gallium arsenide; semiconductor switches; silicon-on-insulator; AC-floating bias techniques; ESD protection; ESD-switch co-design technique; FDD-TRx; FFC; GaAs; SOI CMOS; T/R switch; TDD-Tx-Rx; Tx-Rx isolation loss; concurrent design analysis; electrostatic discharge protected single-pole ten-throw transmit-receive switch; feedforward capacitor; frequency 0.85 GHz; frequency 0.9 GHz; frequency 1.8 GHz; frequency 1.9 GHz; frequency-division duplex transmitting-receiving branches; high GSM transmitter power; high-cost SOS; high-linearity SP10T switch; insertion loss; loss 0.48 dB; loss 0.81 dB; loss 40 dB; loss 43 dB; multiple-band WCDMA smartphones; quad-band GSM; series-shunt topology; simultaneous whole-chip design optimization; size 0.18 mum; time-division duplex transmitting-receiving branches; voltage 8.5 kV; Electrostatic discharges; Field effect transistors; GSM; Linearity; Multiaccess communication; Spread spectrum communication; Switches; CMOS; ESD; RF; SOI; SP10T; SPMT; co-design; concurrent design; linearity; switch;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2014.2331956
