Fabrication of low threshold voltage microlasers

Author

Scherer, Axel ; Jewell, J.L. ; Walther, M. ; Harbison, J.P. ; Florez, L.T.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

28

Issue

13

fYear

1992

fDate

6/18/1992 12:00:00 AM

Firstpage

1224

Lastpage

1226

Abstract

Vertical cavity surface emitting lasers (VCSELs) with threshold voltages of 1.7 V and light emission at 850 nm have been fabricated. The resistance-area product in these new vertical cavity lasers is comparable to that of edge-emitting lasers, and threshold currents as low as 3mA have been measured. Molecular beam epitaxy was used to grow n-type mirrors, a quantum well active region, and a heavily Be-doped p-contact. After contact definition and alloying, passive high-reflectivity mirrors were deposited by reactive sputter deposition of SiO₂-Si₃N₄ to complete the laser cavity.

Keywords

laser cavity resonators; laser transitions; molecular beam epitaxial growth; optical workshop techniques; semiconductor junction lasers; sputter deposition; 1.7 V; 3 mA; 850 nm; MBE; SiO₂-Si₃N₄; alloying; contact definition; fabrication; heavily Be-doped p-contact; low threshold voltage; microlasers; n-type mirrors; passive high-reflectivity mirrors; quantum well active region; reactive sputter deposition; semiconductor lasers; surface emitting lasers; vertical cavity lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19920773

Filename

144349