Title :
Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching
Author :
Kao, Chih-Chiang ; Kuo, H.C. ; Yeh, K.F. ; Chu, J.T. ; Peng, W.L. ; Huang, H.W. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
fDate :
6/1/2007 12:00:00 AM
Abstract :
In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method
Keywords :
gallium compounds; laser materials processing; light emitting diodes; nanotechnology; optical fabrication; sputter etching; surface roughness; wide band gap semiconductors; GaN; GaN light-emitting diodes; ICP dry etching; inductively coupled plasma reactive ion etching; laser lift-off; light-output power; nanoscaled roughness; surface roughness; wall-plug efficiency; Dry etching; Gallium nitride; Light emitting diodes; Optical device fabrication; Plasma applications; Plasma devices; Plasma properties; Rough surfaces; Surface emitting lasers; Surface roughness; GaN; laser lift-off (LLO); light extraction efficiency; light-emitting diode (LED); nano-roughened surface;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.897455
