• DocumentCode
    847628
  • Title

    Exchange biasing of oxidized NiFe 81/19

  • Author

    Becker, Christian ; Bartos, Axel ; Gatzen, Hans H.

  • Author_Institution
    HL Planartechnik, Dortmund, Germany
  • Volume
    38
  • Issue
    5
  • fYear
    2002
  • fDate
    9/1/2002 12:00:00 AM
  • Firstpage
    2770
  • Lastpage
    2772
  • Abstract
    The influence of breaking the vacuum while depositing an exchange coupled multilayer system for a GMR spin valve sensor was investigated, focusing particularly on the relationship between etching time and exchange coupling properties of the antiferromagnet to the ferromagnet. A Cr46Mn46Pt8 antiferromagnet was used to induce a unidirectional anisotropy in a Ni81Fe19 ferromagnetic layer. Topically, the exchange coupled 30 nm CrMnPt/12 nm NiFe films exhibited an exchange field of approximately 80 Oe by depositing the layers without breaking the vacuum and no consecutive annealing process. Unloading the NiFe layer and exposing it to the air required a sputter etching process before depositing the antiferromagnet to accomplish exchange coupling. For achieving optimal results, the etching time has to match the time required for removing the oxide film but not for etching the NiFe layer any further. However, layer systems deposited by breaking the vacuum displayed a reduction of the exchange field of roughly 50%.
  • Keywords
    antiferromagnetic materials; chromium alloys; exchange interactions (electron); ferromagnetic materials; giant magnetoresistance; induced anisotropy (magnetic); iron alloys; magnetic hysteresis; magnetic multilayers; magnetic sensors; manganese alloys; nickel alloys; platinum alloys; spin valves; sputter deposition; sputter etching; 12 nm; 30 nm; Cr46Mn46Pt8 antiferromagnet; Cr46Mn46Pt8-Ni81Fe19; GMR spin valve sensor; M-H loop; Ni81Fe19 ferromagnetic layer; NiFe layer unloading; etching time; exchange coupled CrMnPt/NiFe films; exchange coupled multilayer system; exchange coupling properties; exchange field reduction; oxide film removal; sputter deposition; sputter etching process; unidirectional anisotropy; vacuum breaking; Anisotropic magnetoresistance; Annealing; Antiferromagnetic materials; Chromium; Iron; Nonhomogeneous media; Sensor systems; Spin valves; Sputter etching; Vacuum systems;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2002.803159
  • Filename
    1042351