Title :
Thermally activated reversal in exchange-coupled structures
Author :
Wang, Y.G. ; Petford-Long, A.K. ; Laidler, H. ; O´Grady, K. ; Kief, M.T.
Author_Institution :
Dept. of Mater., Oxford Univ., UK
fDate :
9/1/2002 12:00:00 AM
Abstract :
In this paper, we study the thermally activated reversal of IrMn/CoFe exchange-coupled structures using Lorentz microscopy and magnetometry. An asymmetry and a training effect were found on the hysteresis loops both with and without holding the film at negative saturation of the ferromagnetic layer. Holding the film at negative saturation results in the hysteresis loop shifting toward zero field. We believe that, in this system, two energy barrier distributions with different time constants coexist. The large-time-constant thermally activated reversal of the antiferromagnetic layer contributes to a increasing shift of the entire hysteresis loop toward zero field with increased period of time spent at negative saturation of the ferromagnetic layer. The small-time-constant thermal activation contributes to asymmetry in the magnetization reversal and training effects.
Keywords :
cobalt alloys; coercive force; exchange interactions (electron); interface magnetism; iridium alloys; iron alloys; magnetic hysteresis; magnetisation reversal; manganese alloys; transmission electron microscopy; IrMn-CoFe; IrMn/CoFe exchange-coupled structures; Lorentz transmission electron microscopy; antiferromagnetic layer; coercivity; energy barrier distributions; ferromagnetic layer; hysteresis loop asymmetry; hysteresis loop shift; hysteresis loop training effect; large-time-constant thermally activated reversal; magnetization reversal asymmetry; magnetometry; negative saturation; small-time-constant thermal activation; thermally activated reversal; time constants; Antiferromagnetic materials; Atomic force microscopy; Electrons; Energy barrier; Magnetic films; Magnetic force microscopy; Magnetic hysteresis; Magnetization reversal; Saturation magnetization; Semiconductor films;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2002.803158