Title :
High-frequency performance for sub-0.1 mu m gate InAs-inserted-channel InAlAs/InGaAs HEMT
Author :
Akazaki, T. ; Enoki, Tsutomu ; Arai, Kenta ; Umeda, Yohtaro ; Ishii, Y.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
6/18/1992 12:00:00 AM
Abstract :
The authors examine the high-frequency performance of a sub-0.1 mu m gate InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel. The transconductance is 2.1 S/mm and the current-gain cutoff frequency is 264 GHz using a 0.08 mu m-long gate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.08 micron; 2.1 S; 264 GHz; HEMT; HF performance; InAlAs-InAs-InGaAs; InGaAs channel; channel inserted InAs layer; current-gain cutoff frequency; high-frequency performance; sub-0.1 mu m gate; submicron gate; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920776
