New approach to model nonquasi-static (NQS) effects for MOSFETs. Part I: Large-signal analysis

Author

Roy, Ananda S. ; Vasi, Juzer M. ; Patil, Mahesh B.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India

Volume

50

Issue

12

fYear

2003

Firstpage

2393

Lastpage

2400

Abstract

This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin´s Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.

Keywords

Galerkin method; MOSFET; inversion layers; semiconductor device models; variational techniques; Galerkin´s method; MOSFET; boundary conditions; charge sheet model; charge-based model; compact model; fast bias voltage changes; inversion layer charge; large-signal analysis; nonquasistatic model; physics-based model; state variable equations; turnon transient; variational technique; Differential equations; MOSFET circuits; Moment methods; Nonlinear equations; Partial differential equations; Physics; Predictive models; Steady-state; Transient response; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.819053

Filename

1255601