Title :
A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: Small-signal analysis
Author :
Roy, Ananda S. ; Vasi, Juzer M. ; Patil, Mahesh B.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
We present a new approach to model nonquasi-static (NQS) effects in a MOSFET in a small-signal situation. The model derived here is based on the large-signal NQS model previously proposed. The derivation of the small-signal model is presented. The small-signal parameters obtained with this model prove to be accurate up to very high frequencies. An excellent match between the new model and device simulation results has been observed even when the frequency is many times larger than the cutoff frequency.
Keywords :
Galerkin method; MOSFET; inversion layers; semiconductor device models; variational techniques; MOSFET; Y parameters; cutoff frequency; device simulation; eigenvectors; nonquasistatic effects; small-signal analysis; step change; transistor model; Capacitance; Circuit simulation; Computer languages; Convergence of numerical methods; Cutoff frequency; Equations; MOSFET circuits; Microelectronics; Radio frequency; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.819054
