High-Power AlGaInAs Mode-Locked DBR Laser With Integrated Tapered Optical Amplifier

Author

Akbar, Jehan ; Lianping Hou ; Haji, Mohsin ; Strain, Michael J. ; Marsh, John H. ; Bryce, A.C. ; Kelly, Anthony E.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

Volume

25

Issue

3

fYear

2013

fDate

Feb.1, 2013

Firstpage

253

Lastpage

256

Abstract

We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; integrated optics; laser mode locking; semiconductor optical amplifiers; semiconductor quantum wells; AlGaInAs-InP; active region; frequency 40 GHz; high-power mode-locked DBR laser; integrated tapered semiconductor optical amplifier; optimized low-optical-confinement epitaxial material; passive far-field reduction layer; passively mode-locked distributed Bragg reflector laser; power 200 mW; quantum wells; time 4.3 ps; transform-limited pulses; wavelength 1.5 mum; Laser mode locking; Nonlinear optics; Optical waveguides; Power generation; Semiconductor optical amplifiers; AlGaInAs; mode-locked laser; optical pulse generation; semiconductor optical amplifier;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2231858

Filename

6374649