DocumentCode :
848161
Title :
The Co2MnGe Heusler compound: a first principles study of the bulk phase and of the interface with GaAs
Author :
Picozzi, S. ; Continenza, A. ; Freeman, A.J.
Author_Institution :
Dipt. di Fisica, L´´Aquila Univ., Italy
Volume :
38
Issue :
5
fYear :
2002
fDate :
9/1/2002 12:00:00 AM
Firstpage :
2895
Lastpage :
2897
Abstract :
Within density functional theory, full-potential linearized augmented plane wave calculations have been performed to study the structural, electronic and magnetic properties of the Co2MnGe Heusler compound. As a result of the semiconducting (metallic) character found in the minority (majority) band structure, this material is predicted to be half-metallic, with an integer magnetic moment of 5 μB. This peculiar property, highly desired for spintronics applications, stimulated the study of the Co2MnGe/GaAs interface. Our calculations show that the predicted band offset is not suitable for spin-injection and that, due to interface states, the half-metallicity is lost in proximity to the junction.
Keywords :
APW calculations; Brillouin zones; ab initio calculations; cobalt alloys; core levels; density functional theory; electron spin polarisation; energy gap; ferromagnetic materials; germanium alloys; linear muffin-tin orbital method; manganese alloys; semimetals; Brillouin zone sampling; Co2MnGe; Co2MnGe-GaAs; Heusler compound; ab-initio calculations; bulk phase; core levels; correlation potential; density functional theory; electronic properties; exchange potential; full-potential linearized augmented plane wave calculations; half-metallic ferromagnet; integer magnetic moment; interface band offset; interface states; magnetic properties; majority spin band structure; minority band structure; muffin tin spheres; spin-injection; spin-polarized band structure; spintronics; structural properties; Density functional theory; Gallium arsenide; Inorganic materials; Interface states; Magnetic materials; Magnetic moments; Magnetic properties; Magnetoelectronics; Semiconductivity; Semiconductor materials;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2002.803142
Filename :
1042402
Link To Document :
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