DocumentCode :
84820
Title :
Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by Using 2-D Close-Packed 
Microsphere Arrays
Author :
Xiao-Hang Li ; Peifen Zhu ; Guangyu Liu ; Jing Zhang ; Renbo Song ; Yik-Khoon Ee ; Kumnorkaew, P. ; Gilchrist, J.F. ; Tansu, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Volume :
9
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
324
Lastpage :
332
Abstract :
The enhancement of light extraction efficiency of InGaN quantum well light emitting diodes (LEDs) was achieved by employing the refractive index matched TiO2 microsphere arrays. The optimization studies of the dipping method and rapid convective deposition (RCD) method were carried out for the deposition of TiO2 microsphere arrays onto LEDs. The two-dimensional (2D) close-packed TiO2 microsphere arrays were deposited by the using optimized conditions of the dipping and RCD methods, respectively. The light extraction efficiencies of LEDs under electrical injection were enhanced by 1.8-1.9 times by utilizing 520-nm diameter amorphous and anatase TiO2 microspheres via the two deposition methods.
Keywords :
III-V semiconductors; dip coating; indium compounds; light emitting diodes; liquid phase deposition; quantum well devices; wide band gap semiconductors; 2D close packed microsphere arrays; InGaN; TiO2; amorphous microsphere; anatase microsphere; dipping method; electrical injection; light extraction efficiency enhancement; optimization study; quantum well light emitting diodes; rapid convective deposition method; size 520 nm; Gallium nitride; Lenses; Light emitting diodes; Microoptics; Power generation; Refractive index; Surface treatment; ${hbox{TiO}}_{2}$
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2013.2246541
Filename :
6476034
Link To Document :
