Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET´s

Author

Bellens, R. ; de Schrijver, E. ; Groeseneken, Guido ; Keremans, P. ; Maes, Herman E.

Author_Institution

IMEC, Leuven, Belgium

Volume

13

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

357

Lastpage

359

Abstract

An apparently non-quasi-static degradation behavior is found for nMOS transistors that are dynamically stressed with conditions which favor hot-hole injection. This effect can be ascribed to a post-stress effect occurring during the waiting time between the different pulses. It is shown that this effect is of importance only when a net positive charge is built up during the stress. The deviating behavior under dynamic stress conditions can be predicted based on the measurement of the post-stress effect after a static degradation.<>

Keywords

dynamic testing; hot carriers; insulated gate field effect transistors; semiconductor device testing; dynamic hot-carrier degradation; dynamic stress conditions; hot-hole injection; nMOS transistors; passivated n-channel MOSFET; post-stress effects; static degradation; Degradation; Frequency measurement; Hot carrier effects; Hot carriers; MOSFETs; Pulse measurements; Space vector pulse width modulation; Stress; Time measurement; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192754

Filename

192754