Title :
Comparison of neutral electron trap generation by hot-carrier stress in n-MOSFET´s with oxide and oxynitride gate dielectrics
Author :
Joshi, Aniruddha B. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
A comparative study of neutral electron-trap generation due to hot-carrier stress in n-MOSFETs with pure oxide, NH/sub 3/-nitrided oxide (RTN), and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics is reported. Results show that neutral electron trap generation is considerably suppressed by nitridation and reoxidation. The nature of neutral traps is described based on the kinetics of trap filling by electron injection into the gate dielectrics immediately after channel hot-electron stress (CHES). Improved endurance of the RTN and RTN/RTO oxides is explained using physical models related to interfacial strain relaxation.<>
Keywords :
dielectric thin films; electron traps; hot carriers; insulated gate field effect transistors; nitridation; oxidation; semiconductor device testing; stress relaxation; Si-SiO/sub 2/; Si-SiO/sub x/N/sub y/; channel hot-electron stress; hot-carrier stress; interfacial strain relaxation; n-MOSFETs; neutral electron trap generation; nitridation; oxide gate dielectrics; oxynitride gate dielectrics; physical models; reoxidation; reoxidized nitrided oxide; trap filling kinetics; Charge carrier processes; Degradation; Dielectrics; Electron traps; Filling; Hot carriers; Kinetic theory; MOSFET circuits; Stress control; Thermal stresses;
Journal_Title :
Electron Device Letters, IEEE
