DocumentCode :
848358
Title :
Long-wavelength infrared photoinduced switching of a resonant tunneling diode using the intersubband transition
Author :
Liu, H.C. ; Steele, A.G. ; Buchanan, M. ; Wasilewski, Z.R.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council, Ottawa, Ont., Canada
Volume :
13
Issue :
7
fYear :
1992
fDate :
7/1/1992 12:00:00 AM
Firstpage :
363
Lastpage :
365
Abstract :
Voltage switching induced by long-wavelength infrared light from a CO/sub 2/ laser was observed using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states. Possible optoelectronic and all-optical switching applications involving hysteresis are proposed and discussed.<>
Keywords :
optical bistability; optical switches; photoconducting devices; photodiodes; resonant tunnelling devices; semiconductor switches; tunnel diodes; CO/sub 2/ laser; all-optical switching; bistable region; double barrier RTD; hysteresis; infrared photoinduced switching; intersubband transition; long-wavelength infrared light; optoelectronic switching; quantum confined states; resonant tunneling diode; Diodes; Heating; Lighting; Power lasers; Quantum well lasers; Resistors; Resonant tunneling devices; Switches; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.192756
Filename :
192756
Link To Document :
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