Title :
Thermoelectric AC power sensor by CMOS technology
Author :
Jaeggi, Dominik ; Baltes, Henry ; Moser, David
Author_Institution :
Phys. Electron. Lab., Inst. of Quantum Electron., Zurich, Switzerland
fDate :
7/1/1992 12:00:00 AM
Abstract :
The authors report the development of a thermoelectric AC power sensor (thermoconverter) realized by industrial CMOS IC technology in combination with postprocessing micromachining. The sensor is based on a polysilicon heating resistor and a polysilicon/aluminum thermopile integrated on an oxide microbridge. The thermopile sensitivity is 9.9 mV/mW and the burn-out power of the sensor is 50 mW. The time constant is 1.85 ms and the SNR (signal-to-noise ratio) is 8*10/sup 9//W. The linearity error with respect to frequency is less than 0.1% below 400 MHz and less than 1% up to 1.2 GHz.<>
Keywords :
CMOS integrated circuits; electric sensing devices; micromechanical devices; power measurement; thermopiles; 1.85 ms; 10 to 10/sup 9/ Hz; 50 mW; CMOS IC technology; Si-Al-SiO/sub 2/; burn-out power; linearity error; oxide microbridge; polysilicon heating resistor; polysilicon thermopile; postprocessing micromachining; signal-to-noise ratio; thermoconverter; thermoelectric AC power sensor; thermopile sensitivity; time constant; Aluminum; CMOS integrated circuits; CMOS technology; Cogeneration; Linearity; Micromachining; Resistors; Signal to noise ratio; Thermal sensors; Thermoelectricity;
Journal_Title :
Electron Device Letters, IEEE
