• DocumentCode
    848376
  • Title

    Low ohmic contacts to C-doped p-GaAs with Au/Zn/Au structure

  • Author

    Rezazadeh, Ali A. ; Rees, P.K.

  • Volume
    28
  • Issue
    13
  • fYear
    1992
  • fDate
    6/18/1992 12:00:00 AM
  • Firstpage
    1248
  • Lastpage
    1250
  • Abstract
    The Au/Zn/Au metallisation scheme is investigated as a potential ohmic contact to C-doped p-type GaAs (4*1019 cm-3, 1000 AA). Two alloying techniques, thermal and RTA, were investigated for different alloying times. The alloying times were optimised for the best contact resistance and a specific contact resistance of 3.6*10-6 Omega cm2, corresponding to a transfer resistance of 0.04 Omega mm, was achieved using RTA at 400 degrees C for 60 s. These contacts showed ohmic behaviour prior to any heat treatment.
  • Keywords
    III-V semiconductors; annealing; carbon; contact resistance; gallium arsenide; gold; heat treatment; metallisation; ohmic contacts; semiconductor-metal boundaries; zinc; 400 degC; 60 s; Au-Zn-Au-GaAs:C; Au/Zn/Au metallisation scheme; C-doped; C-doped p-type GaAs; RTA; alloying times; contact resistance; heat treatment; ohmic contacts; rapid thermal annealing; thermal alloying;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920788
  • Filename
    144364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=848376