Title :
Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
Author :
Weiner, Kurt H. ; Carey, Paul G. ; Mccarthy, Anthony M. ; Sigmon, T.W.
Author_Institution :
Lawrence Livermore Nat. Lab., Livermore, CA, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage current densities >
Keywords :
laser beam applications; leakage currents; p-n homojunctions; semiconductor diodes; semiconductor doping; 100 V; 300 AA; GILD; Si:B; breakdown voltages; electrical activation; gas immersion laser doping; ideality factors; junction depth; low temperature fabrication; p/sup +/-n diodes; reverse leakage current densities; Boron; Diodes; Doping; Gas lasers; Germanium; Implants; Optical device fabrication; Pulsed laser deposition; Rapid thermal processing; Silicon;
Journal_Title :
Electron Device Letters, IEEE
