DocumentCode
848377
Title
Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
Author
Weiner, Kurt H. ; Carey, Paul G. ; Mccarthy, Anthony M. ; Sigmon, T.W.
Author_Institution
Lawrence Livermore Nat. Lab., Livermore, CA, USA
Volume
13
Issue
7
fYear
1992
fDate
7/1/1992 12:00:00 AM
Firstpage
369
Lastpage
371
Abstract
Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage current densities >
Keywords
laser beam applications; leakage currents; p-n homojunctions; semiconductor diodes; semiconductor doping; 100 V; 300 AA; GILD; Si:B; breakdown voltages; electrical activation; gas immersion laser doping; ideality factors; junction depth; low temperature fabrication; p/sup +/-n diodes; reverse leakage current densities; Boron; Diodes; Doping; Gas lasers; Germanium; Implants; Optical device fabrication; Pulsed laser deposition; Rapid thermal processing; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.192758
Filename
192758
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