Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM´s

Author

Lo, G.Q. ; Ito, S. ; Kwong, Dim-Lee ; Mathews, V.K. ; Fazan, Pierre C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

372

Lastpage

374

Abstract

Experimental results are presented demonstrating that by using rapid thermal nitridation (RTN) of rugged poly-Si surface prior to Si/sub 3/N/sub 4/ deposition, the quality and reliability of reoxidized Si/sub 3/N/sub 4/ dielectric (ON dielectric with an effective oxide thickness of about 35 AA) can be significantly improved over ON films on rugged poly-Si without RTN treatment. These improvements include significantly reduced defect-related dielectric breakdown, 10/sup 3/ * increase in TDDB lifetime, lower leakage current, and suppressed electron-hole trapping and capacitance loss during stress.<>

Keywords

dielectric thin films; electric breakdown of solids; incoherent light annealing; leakage currents; metal-insulator-semiconductor devices; nitridation; reliability; silicon compounds; MOS capacitors; Si; SiO/sub 2/-Si/sub 3/N/sub 4/-Si; TDDB lifetime; capacitance loss; defect-related dielectric breakdown; electron-hole trapping; high density DRAM; leakage current; rapid thermal nitridation; reliability; rugged polysilicon; stacked dielectric; Capacitance; Capacitors; Charge carrier processes; Degradation; Dielectrics; Electrodes; Indium tin oxide; Leakage current; Random access memory; Surface treatment;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192759

Filename

192759