Title :
Graded-gap a-SiC:H p-i-n thin-film light-emitting diodes
Author :
Hong, Jyh-Wong ; Shin, Nerng-Fu ; Jen, Tean-Sen ; Ning, Sui-Liang ; Chang, Chun-Yen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung, Taiwan
fDate :
7/1/1992 12:00:00 AM
Abstract :
To improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), a p-i-n TFLED with a graded p-i junction was proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement is attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.<>
Keywords :
amorphous semiconductors; hydrogen; light emitting diodes; p-i-n diodes; silicon compounds; thin film devices; amorphous SiC:H; electroluminescence intensity; graded-gap p-i junction; hole injection efficiency; injection current density; p-i-n TFLED; p-i-n thin-film light-emitting diodes; Current density; Displays; Electrodes; Glass; Light emitting diodes; Nonhomogeneous media; PIN photodiodes; Plasma chemistry; Radio frequency; Transistors;
Journal_Title :
Electron Device Letters, IEEE
