Title :
Monte-Carlo simulation of noise in GaAs at electric fields up to the critical field
Author :
Adams, John G., III ; Tang, Ting-wei
fDate :
7/1/1992 12:00:00 AM
Abstract :
Monte Carlo noise calculations using a method based on the Ramo-Schockley theorem were carried out for n-type homogeneous GaAs under a variety of conditions. Classical Nyquist noise results were reproduced for resistors at both 77 and 300 K. The method was used to model noise at 300 K at fields up to the critical field, and the results compare favorably with those found experimentally. An alternative method for determining the intervalley coupling constant by using noise temperature data is described, and the results using this method suggest the value of the intervalley coupling constant approximately=0.5*10/sup 9/ eV-cm/sup -1/.<>
Keywords :
III-V semiconductors; Monte Carlo methods; electron device noise; gallium arsenide; high field effects; semiconductor device models; thermal noise; 300 K; 77 K; GaAs; Monte-Carlo simulation; Nyquist noise; Ramo-Schockley theorem; critical field; device noise; high electric fields; intervalley coupling constant; n-type; noise; noise temperature; resistors; Electromagnetic compatibility; Electrons; Equations; Fluctuations; Gallium arsenide; Optical noise; Phonons; Resistors; Semiconductor device noise; Temperature;
Journal_Title :
Electron Device Letters, IEEE