DocumentCode :
84842
Title :
High- 
Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits
Author :
Ning Li ; Okada, Kenichi ; Inoue, Takeshi ; Hirano, Takuichi ; Qinghong Bu ; Narayanan, Aravind Tharayil ; Siriburanon, Teerachot ; Sakane, Hitoshi ; Matsuzawa, Akira
Author_Institution :
Tokyo Inst. of Technol., Tokyo, Japan
Volume :
62
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
1269
Lastpage :
1275
Abstract :
A helium-3 ion bombardment technique is proposed to realize highQ inductors by creating locally semi-insulating substrate areas. A dose of 1.0 × 1013 cm-2 helium-3 increases a Si substrate resistivity from 4 Ω · cm to above 1 kQ · cm, which improves the quality factor of a 2-nH inductor with a 140-μm diameter by 38% (Q = 16.3). An aluminum mask is used for covering active areas, and at least 15-μm distance from the mask edge is required to avoid the p-n junction leakage. The proposed technique is applied to an 8-GHz oscillator, and an 8.5 dB improvement of the measured phase noise has been achieved.
Keywords :
CMOS analogue integrated circuits; Q-factor; aluminium; elemental semiconductors; helium; integrated circuit noise; masks; microwave oscillators; noise measurement; p-n junctions; phase noise; radiofrequency integrated circuits; silicon; Al; He; RF CMOS integrated circuits; Si; aluminum mask; frequency 8 GHz; helium-3 ion bombardment technique; high-Q inductors; mask edge; oscillator; p-n junction leakage; phase noise; quality factor; semiinsulating substrate areas; size 140 mum; substrate resistivity; Conductivity; Inductors; Q-factor; Radiation effects; Silicon; Substrates; Transistors; CMOS; helium-3 bombardment; high- ${Q}$ inductor; high-Q inductor.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2403873
Filename :
7052393
Link To Document :
