DocumentCode
84844
Title
Low Temperature Superconducting RF MEMS Devices
Author
Attar, Sara S. ; Mansour, Raafat R.
Author_Institution
Univ. of Waterloo, Waterloo, ON, Canada
Volume
23
Issue
3
fYear
2013
fDate
Jun-13
Firstpage
1800104
Lastpage
1800104
Abstract
A dc contact and a capacitive contact niobium-based superconducting radio frequency (RF) microelectro-mechanical systems switches are presented for the first time. The switches are amenable to integration with superconducting-micro-electronics technology. A comparison of the RF performance of the switches at room and cryogenic temperatures indicate a significant improvement in the insertion loss of the switch when niobium is superconducting. A niobium-based dc contact single-port-double-throw switch is designed, fabricated, and tested. Two types of switched capacitor banks are also designed each implementing one of the two types of the introduced switches. The measured results of the capacitor bank with capacitive contact switches show variation of the capacitance value from 0.4 to 0.94 pF. The measured results of the capacitor bank with dc contact switches show variation of the capacitance value from 0.2 to 1 pF at 4 K.
Keywords
capacitance; capacitors; microswitches; niobium; superconducting switches; Nb; capacitance variation; capacitive contact niobium-based superconducting radiofrequency microelectromechanical system switch; cryogenic temperature; dc contact niobium-based superconducting radiofrequency microelectromechanical system switch; low temperature superconducting RF MEMS devices; niobium-based dc contact single-port-double-throw switch; superconducting-microelectronics technology; switch RF performance; switch insertion loss; switched capacitor banks; temperature 293 K to 298 K; temperature 4 K; Capacitors; Contacts; Cryogenics; Microswitches; Niobium; Radio frequency; Capacitor banks; cryogenics; microelectromechanical systems (MEMs); radio frequency (RF); switches;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2012.2231896
Filename
6374655
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