Title :
A new low voltage precision CMOS current reference with no external components
Author :
Dehghani, Rasoul ; Atarodi, S.M.
Author_Institution :
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
Abstract :
A novel current reference with low temperature and supply sensitivity and without any external component has been developed in a 0.25 μm mixed-mode process. The circuit is based on a bandgap reference (BGR) voltage and a CMOS circuit similar to a beta multiplier. An NMOS transistor in triode region has been used in place of a resistor in conventional beta multiplier to achieve a current which has a negative temperature coefficient and only oxide thickness dependent. The BGR voltage has a positive temperature coefficient to cancel the negative temperature coefficient of the beta multiplier. The simulation results using Bsim3v3 model show max-to-min fluctuation of less than 1% over a temperature range of -20°C to +100°C and a supply voltage range of 1.4 V to 3 V with ±30% tolerance for all of the used on- chip resistors. The maximum current variation is slightly less than the oxide thickness variation in the process corners.
Keywords :
CMOS analogue integrated circuits; analogue multipliers; circuit simulation; low-power electronics; operational amplifiers; reference circuits; -20 to 100 C; 1.4 to 3 V; Bsim3v3 model; CMOS current reference; NMOS transistor negative temperature coefficient; analog processing; bandgap reference voltage; beta multiplier; data converter bias circuits; low supply sensitivity; low temperature sensitivity; low voltage precision reference; max-to-min fluctuation; mixed-mode process; operational amplifier; oxide thickness dependent; positive temperature coefficient; startup circuit; Capacitors; Circuits; Fluctuations; Low voltage; MOSFETs; Operational amplifiers; Photonic band gap; Resistors; Temperature dependence; Temperature sensors;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
DOI :
10.1109/TCSII.2003.820239