Simulation study of peak junction temperature and power limitation of AlGaAs/GaAs HBTs under pulsed and CW operation

Author

Gui, Xiang ; Gao, Guang-bo ; Morkoç, Hadis

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

13

Issue

8

fYear

1992

Firstpage

411

Lastpage

413

Abstract

The authors have used a 3-D transmission-line matrix (TLM) modeling method to study the junction temperature distribution and power limitation of device geometries with multiple embedded heat sources. Peak values of the junction temperature against the dissipated power density under both pulsed and CW operation are presented for a typical power AlGaAs/GaAs HBT structure. These data should facilitate the rapid determination of junction temperature for a given output power, which is of paramount importance in power device design.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; power transistors; semiconductor device models; temperature distribution; 3D TLM model; AlGaAs-GaAs; CW operation; HBT structure; dissipated power density; junction temperature distribution; multiple embedded heat sources; peak junction temperature; power device design; power limitation; pulsed operation; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Land surface temperature; Power generation; Temperature distribution; Thermal conductivity; Transmission line matrix methods; Transmission lines;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192775

Filename

192775