Small offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs double-barrier bipolar transistor

Author

Wu, C.C. ; Lu, S.S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

13

Issue

8

fYear

1992

Firstpage

418

Lastpage

420

Abstract

In/sub 0.49/Ga/sub 0.51/P/GaAs double-barrier bipolar transistors (DBBTs) grown by gas-source molecular beam epitaxy (GSMBE) have been fabricated and measured. This structure has two InGaP barrier layers (100 AA in thickness): one is inserted between the emitter-base (e-b) junction and the other between the base-collector (b-c) junction. An offset voltage of 26 mV and a differential current gain of 120 at room temperature were obtained with a heavily doped p/sup +/ (2*10/sup 19/ cm/sup -3/) base (500 AA in thickness). The small offset voltage was attributed to the similar structure of the e-b and b-c junctions and to the suppression of the hole injection current into the collector by the InGaP hole barrier at the b-c junction.<>

Keywords

III-V semiconductors; bipolar transistors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; tunnelling; 26 mV; In/sub 0.49/Ga/sub 0.51/P-GaAs; InGaP barrier layers; base collector junction; differential current gain; double-barrier bipolar transistor; emitter base junction; gas-source molecular beam epitaxy; hole injection current suppression; offset voltage; Bipolar transistors; Councils; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Substrates; Temperature; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192777

Filename

192777