Title :
The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications
Author :
Jun, Y.K. ; Rha, S.K. ; Kim, S.C. ; Roh, J.S. ; Kim, W.S. ; Lee, Hee-Gook
Author_Institution :
GoldStar Electron Co. Ltd., Seoul, South Korea
Abstract :
A capacitor structure, called the modulated stacked (MOST) capacitor, has been developed to increase the DRAM cell capacitance using surface modulation technology. The hemispherical-shaped polysilicon deposited on top of a thick polysilicon storage electrode is used as a mask to selectively form a deep groove in the electrode, hence significantly increasing the surface area. With this structure, the surface area of the storage electrode can be increased by as much as 8 times that of an ordinary stacked capacitor (STC) which takes the same chip area. Experimental results show that electrical properties such as leakage current, breakdown voltage, and TDDB are comparable to those of a conventional stacked capacitor.<>
Keywords :
DRAM chips; electric breakdown of solids; leakage currents; metal-insulator-semiconductor devices; surface treatment; DRAM cell capacitance; Si; Si-SiO/sub 2/; TDDB; breakdown voltage; deep groove; electrical properties; hemispherical-shaped polysilicon; leakage current; modulated stacked capacitor; surface modulation technology; thick polysilicon storage electrode; Capacitance; Capacitors; Circuits; Dielectric films; Electrodes; Etching; Fabrication; Leakage current; Random access memory; Surface morphology;
Journal_Title :
Electron Device Letters, IEEE
