Title :
Numerical simulation of the hysteresis in the sidegating effect in GaAs MESFETs-the effect of Schottky contacts
Author :
Chang, Shwu-Jing ; Lee, Chien-Ping
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Two-dimensional simulation of the sidegating effect in GaAs MESFETs has been performed. The result confirms that Schottky contacts on semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFETs. The competition between the currents or biases of the contacts is found to be the cause of the S-type negative differential conductivity (S-NDC) or hysteresis observed when measuring the sidegating threshold.<>
Keywords :
III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; leakage currents; negative resistance; 2D numerical simulation; GaAs; GaAs MESFETs; S-type negative differential conductivity; Schottky contacts; drain current reduction; hysteresis; semi-insulating substrate; sidegating effect; sidegating threshold; substrate leakage current; Current measurement; Electron traps; FETs; Gallium arsenide; Hysteresis; Leakage current; MESFETs; Numerical simulation; Schottky barriers; Voltage;
Journal_Title :
Electron Device Letters, IEEE
