DocumentCode
848602
Title
Numerical simulation of the hysteresis in the sidegating effect in GaAs MESFETs-the effect of Schottky contacts
Author
Chang, Shwu-Jing ; Lee, Chien-Ping
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
13
Issue
8
fYear
1992
Firstpage
436
Lastpage
438
Abstract
Two-dimensional simulation of the sidegating effect in GaAs MESFETs has been performed. The result confirms that Schottky contacts on semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFETs. The competition between the currents or biases of the contacts is found to be the cause of the S-type negative differential conductivity (S-NDC) or hysteresis observed when measuring the sidegating threshold.<>
Keywords
III-V semiconductors; Schottky effect; Schottky gate field effect transistors; gallium arsenide; leakage currents; negative resistance; 2D numerical simulation; GaAs; GaAs MESFETs; S-type negative differential conductivity; Schottky contacts; drain current reduction; hysteresis; semi-insulating substrate; sidegating effect; sidegating threshold; substrate leakage current; Current measurement; Electron traps; FETs; Gallium arsenide; Hysteresis; Leakage current; MESFETs; Numerical simulation; Schottky barriers; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.192783
Filename
192783
Link To Document