Title :
Electromigration properties of electroless plated Cu metallization
Author :
Kang, H.-K. ; Cho, J.S.H. ; Wong, S.S.
Author_Institution :
Center for Integrated Syst., Sanford Univ., CA, USA
Abstract :
The electromigration properties of electroless plated copper films have been evaluated under DC stress conditions. The formation of microvoids and the diffusion of copper through the seed layer caused an increase of the line resistance in the initial stage of the stressing. The current density dependence and the activation energy of the lifetime were determined.<>
Keywords :
copper; electroless deposited coatings; electromigration; metallic thin films; metallisation; voids (solid); DC stress conditions; current density dependence; diffusion; electroless plated Cu metallization; electromigration properties; lifetime activation energy; line resistance; microvoids; seed layer; Aluminum alloys; Copper; Current density; Electromigration; Etching; Metallization; Passivation; Semiconductor films; Stress; Substrates;
Journal_Title :
Electron Device Letters, IEEE
