DocumentCode
848687
Title
Theoretical analysis of a proposed InAs/InAsSb
Author
Lal, R.K. ; Jain, M. ; Gupta, S. ; Chakrabarti, P.
Author_Institution
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Volume
150
Issue
6
fYear
2003
Firstpage
527
Lastpage
533
Abstract
The authors propose a single heterojunction InAs/InAsSb
Keywords
III-V semiconductors; energy gap; indium compounds; infrared detectors; p-n heterojunctions; photodetectors; semiconductor device models; surface recombination; tunnelling; 2.5 to 4.5 micron; Auger recombination; InAs-InAsSb; closed form physics-based analytical model; design guidelines; detectivity; doping concentration; energy bandgaps; figure of merit; front-illuminated photodetector; heterojunction photodetector; mid-infrared region; photovoltaic detector; quantum efficiency; radiative recombination; responsivity; single heterojunction detector; surface recombination; tunnelling;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20030432
Filename
1255696
Link To Document