Buried source-side injection (BSSI) for flash EPROM programming

Author

Kaya, Çetin ; Liu, David K Y ; Paterson, Jim ; Shah, Pradeep

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

13

Issue

9

fYear

1992

Firstpage

465

Lastpage

467

Abstract

A flash-EPROM cell structure that can be programmed at low drain voltages and low power is disclosed. The new element in the device structure is the incorporation of buried junction at the source side where the high electric field region is established during programming. The cell is programmed by hot-electron injection at the source side and erased by Fowler-Nordheim tunneling at the drain side. Typical programming time of 10 mu s/byte can be accomplished with 3.5 V on the drain junction. The structure can be built with the standard EPROM technology and can offer advantages in low-voltage power supply systems such as portable and notebook computers.<>

Keywords

EPROM; MOS integrated circuits; hot carriers; integrated circuit technology; tunnelling; 3.5 V; FAMOS oxide; Fowler-Nordheim tunneling; buried source side injection; flash-EPROM cell structure; hot-electron injection; low drain voltages; low power; programming time; Channel hot electron injection; EPROM; Instruments; Low voltage; Portable computers; Power supplies; Process design; Secondary generated hot electron injection; Silicon; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192796

Filename

192796