High-current-gain small-offset-voltage In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors grown by gas source molecular beam epitaxy

Author

Lu, Shey-Shi ; Wu, Chung-Cheng

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

13

Issue

9

fYear

1992

Firstpage

468

Lastpage

470

Abstract

Different emitter size, self-aligned In/sub 0.49/Ga/sub 0.51/P/GaAs tunneling emitter bipolar transistors (TEBTs) grown by gas source molecular beam epitaxy (GSMBE) with 100-AA barrier thickness and 1000-AA p/sup +/(1*10/sup 19/ cm/sup -3/) base have been fabricated and measured at room temperature. A small-signal current gain of 236 and a small common-emitter offset voltage of 40 mV were achieved without any grading. It is found that the emitter size effect on current gain was reduced by the use of a tunnel barrier. The current gain and the offset voltage obtained were the highest and lowest reported values to date, respectively, in InGaP/GaAs system heterojunction bipolar transistors (HBTs) or TEBTs with similar base dopings and thicknesses.<>

Keywords

III-V semiconductors; bipolar transistors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; tunnelling; 40 mV; In/sub 0.49/Ga/sub 0.51/P-GaAs; common emitter I-V characteristics; common-emitter; emitter size effect; gas source molecular beam epitaxy; offset voltage; self-aligned TEBT; small-offset-voltage; small-signal current gain; tunnel barrier; tunneling emitter bipolar transistors; Bipolar transistors; Doping; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Size measurement; Temperature measurement; Thickness measurement; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192797

Filename

192797