Title :
Active mode-locking of an external cavity GaInAsP laser incorporating a fibre-grating reflector
Author :
Burns, Dave ; Sibbett, W.
Author_Institution :
Dept. of Phys. & Astron., St. Andrews Univ.
fDate :
11/10/1988 12:00:00 AM
Abstract :
Active mode-locking of a GaInAsP semiconductor diode amplifier, coupled to an external cavity incorporating an optical fibre grating as a bandwidth limiting and wavelength selective mirror, is reported. The grating defined the central emission wavelength to the 1.53 μm region where mode-locked pulses having durations of less than 10 ps were generated at a repetition rate of 648 MHz
Keywords :
III-V semiconductors; diffraction gratings; fibre optics; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mode locking; mirrors; semiconductor junction lasers; 1.53 micron; 10 ps; active mode locking; bandwidth limiting mirror; central emission wavelength; external cavity GaInAsP laser; fibre-grating reflector; mode-locked pulses; optical fibre grating; repetition rate; semiconductor diode amplifier; wavelength selective mirror;
Journal_Title :
Electronics Letters
