Title :
Effect of InGaAsP intermediate layer in 1.3 μm
Author :
Lei, P.-H. ; Yang, C.-D. ; Wu, M.-C. ; Wang, Z.-B. ; Lin, C.-C. ; Ho, W.-J.
Author_Institution :
Dept. of Comput. Sci. Eng., Diwan Coll. of Manage., Madou, Taiwan
Abstract :
The effect is investigated of introducing a linearly
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; quantum well lasers; 1.3 micron; 16 mA; AlGaInAs; CW operation; InGaAsP; characteristic temperature; differential quantum efficiency; electric field density distribution; linearly graded-index intermediate layer; low slope efficiency drop; multiple quantum well laser diodes; separate-confinement heterostructure intermediate layer; strain-compensated multiple quantum well; threshold current;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030359
