DocumentCode
848719
Title
Template-based MOSFET device model
Author
Graham, Mark G. ; Paulos, John J. ; Nychka, Douglas W.
Volume
14
Issue
8
fYear
1995
fDate
8/1/1995 12:00:00 AM
Firstpage
924
Lastpage
933
Abstract
This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more than a 10x reduction in storage space requirements, relative to a true three-dimensional table, with little loss in accuracy. It will also be shown that the method can be extended to model the intrinsic charge surfaces
Keywords
MOSFET; carrier mobility; semiconductor device models; MOSFET device; accuracy; current table; drain sweep curve; intrinsic charge surfaces; modeling technique; storage space requirements; template-based model; Analytical models; Closed-form solution; Couplings; Current measurement; Degradation; Equations; Geometry; Interpolation; MOSFET circuits; Solid modeling;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.402493
Filename
402493
Link To Document